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20N06 Datasheet PDF
- N-Channel MOSFET Transistor - MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching applications in power supplies ·Motor controls,high efficient DC to DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 60 V Gate-Sour
Inchange Semiconductor - NTD20N06 - Data
NTD20N06 Power MOSFET 20 Amps, 60 Volts, N Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Pb Free Packages are Available Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge Power Supplies Converters Power Motor Controls Bridge Circuits http:, , onsemi.com V(B
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