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1SV323 Datasheet PDF
- TOSHIBA Diode Silicon Epitaxial Planar Type TCXO/VCO - Diode
1SV323 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 TCXO, VCO · · · High capacitance ratio: C1 V, C4 V = 4.3 (typ.) Low series resistance: rs = 0.4 Ω (typ.) Useful for small size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Cap
Toshiba Semiconductor
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