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1SV313 Datasheet PDF
- DIODE (VCO FOR UHF BAND RADIO) - Diode
TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO l High Capacitance Ratio : C0.5V, C2.5V = 2.5 (Typ.) l Low Series Resistance : rs = 0.35Ω (Typ.) l Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 10 125 55~125 UNIT V °C °C 1SV313 Unit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) JEDEC EIAJ TOSHIBA 1 1E1A CHARACTERISTIC Reverse Voltage Reverse
Toshiba Semiconductor
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