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  • DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS) - Diode

    TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C 1SV252 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Forward voltage Total capacitance Series resistance VR IR = 10 mA IR VR = 50 V VF IF =

    Toshiba Semiconductor
    Toshiba Semiconductor




 






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