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1SS423 Datasheet PDF
- Silicon Epitaxial Planar Type Diode - Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max) 1SS423 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation VR IFM IO IFSM P 40 200* 100* 1* 100* V mA mA A
Toshiba
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