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1SS413CT Datasheet PDF
- Schottky Barrier Diode - Diode
Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 A (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 Peak forwa
Toshiba
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