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1SS398 Datasheet PDF
- Silicon Epitaxial Planar Diode - Diode
TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High-Voltage, High-Speed Switching Applications 1SS398 Unit: mm Small package : SC-59 Low forward voltage : VF = 1.0 V (typ.) @ IF = 100 mA Fast reverse recovery time : trr = 0.5 μs (typ.) Small total capacitance : CT = 2.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 * mA Avera
Toshiba Semiconductor
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