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1SS394 Datasheet PDF
- Silicon Epitaxial Schottky Barrier Type Diode - Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application 1SS394 Unit: mm - Small package - Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 mA 1A 150 mW Junction temperature Tj 125 °C
Toshiba Semiconductor
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