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1SS382 Datasheet PDF
- Silicon epitaxial planar type diode - Diode
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge c
Toshiba Semiconductor
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