|
1SS368 Datasheet PDF
- DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) - Diode
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Small package Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time: trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) 1SS368 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage VRM 85 Reverse voltage VR 80 Maximum (peak) forward current IFM 200 Average forward current IO 100 Surge current (10ms) IFSM 1 Pow
Toshiba Semiconductor - SILICON EPITAXIAL PLANAR DIODE - Diode
1SS368 SILICON EPITAXIAL PLANAR DIODE Ultra High Speed Switching Application Features Small package Low forward voltage: VF=0.98V (typ.) Fast reverse recovery time: trr=1.6ns (typ.) Small total capacitance: CT=0.5pF (typ.) PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 W8 Top View Marking Code: "W8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25 ) Parameter Symbol Value Maximum (peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Maximum (peak) Forward Cur
SEMTECH
|
|
Please enter the part name