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1SS314 Datasheet PDF
- SILICON EPITAXIAL PLANAR DIODE - Diode
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 1SS314 VHF Tuner Band Switch Applications Small package. Small total capacitance: CT = 1.2 pF (max) Low series resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 30 V IF 100 mA Tj 125 °C Tstg 55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature, cur
Toshiba Semiconductor - SILICON EPITAXIAL PLANAR DIODE - Diode
1SS314 SILICON EPITAXIAL PLANAR DIODE Applications VHF Tuner Band Switch PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 TY Top View Marking Code: "TY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter HReverse Voltage Forward Current Junction Temperature CStorage Temperature Range TECharacteristics at Ta = 25 OC Parameter Forward Voltage Mat IF= 2 mA Reverse Current Eat VR= 15 V Reverse Voltage Sat IR= 1 μA Symbol VR IF TJ Tstg Value 30 100 125 - 55 to
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