JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS193
Switching Diode
FEATURES y Low forward voltage y Fast reverse recovery time
MARKING: F3
F3 F3
SOT-23
1 3
2
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation The
JCET
DIODE - Diode
RoHS
1SS193 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Reverse Voltage
VR : 80V
OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC
1
1.
2.4 1.3
SOT-23
3
2
ONIC CMarking:F3
2.9 1.9 0.95 0.95 0.4
Unit:mm
TRELECTRICAL CHARACTERISTICS
o
C(Ta=25 C unless otherwise specified)
Parameter
Symbol
EReverse breakdown voltage
V(BR)
LReverse Voltage leakage current
IR
EForward