SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
TO-220AB TO-220 FULLPAK
FEATURES
560 V VGS = 10 V 68 17.6 21.8 Single
D
Low Figure-of-Merit Ron x Qg
0.38
100 % Avalanche Tested Gate Charge Improved Trr, Qrr Improved Compliant to RoHS Directive 2002, 95, EC
G
D
S GD S
D2PAK
(TO-263)
G
S
G D S
N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-220AB SiHP1
Vishay Siliconix
SPP16N50C3 - Data
SPP16N50C3 SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge
VDS @ Tjmax RDS(on) ID
560 0.28 16
V Ω A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv, dt rated
2
Ultra low effective capacitances Improved transconductance
P-TO220-3-31
3 12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type SPP16N50C3 SPI16N50C3 SPA16N50C3
Package PG-TO220 PG-TO2