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15N12 Datasheet PDF
- N-Channel Mosfet Transistor - MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 15N12 ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 120 V Gate-Source Voltage-Continuou
Inchange Semiconductor - IXSH15N120A - Data
Preliminary Data Sheet IXSH15N120A IGBT "S" Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 H TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω TC = 25°C Maximum Ratings
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