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14N05 Datasheet PDF
- N-Channel Mosfet Transistor - MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 14N05 ·FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters motor drivers and relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 50 ±10 V V ID Drain C
Inchange Semiconductor - RFD14N05L - Data
RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is
Fairchild Semiconductor
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