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10EDB10 Datasheet PDF
- AXIAL LEADED SILICON RECTIFIER DIODES - Rectifier
10EDB10 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 100V CURRENT: 1.0 A Features ! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability Mechanical Data ! Case: D O - 4 1 Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ABA D DO-41 Dim Min Max A 25.40 ¾ B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in m
SUNMATE - DIODE - 1A 100V TJ = 150C - Diode
DIODE FEATURES Type : 10EDB10 1A 100V Tj =150 °C OUTLINE DRAWING * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight:0.17g 10EDB10 100 50H- Hal
Nihon Inter Electronics
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