ZXMHC6A07T8 PDF Datasheet

The ZXMHC6A07T8 is COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	ZXMHC6A07T8	COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCE INNEFWORPRMOADTIUOCNT Green ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel BVDSS 60V -60V RDS(ON) max 0.3Ω @ VGS = 10V 0.45Ω @ VGS = 4.5V 0.425Ω @ VGS = -10V 0.63Ω @ VGS = -4.5V ID max TA = +25°C 1.8A 1.4A -1.5A -1.2A	Diodes
2	ZXMHC6A07T8	COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of l	Zetex Semiconductors

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Part No	Description	Manufacturers	PDF
ZXMHC3F381N8	H Bridge A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 33mΩ @ VGS= 10V N-CH 30V 9.0nC 60mΩ @ VGS= 4.5V 55mΩ @ VGS= -10V P-CH -30V 12.7nC 80mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A Description	Diodes
ZXMHC3A01N8	MOSFET H-Bridge A Product Line of Diodes Incorporated ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 125mΩ @ VGS= 10V N-CH 30V 3.9nC 180mΩ @ VGS= 4.5V 210mΩ @ VGS= -10V P-CH -30V 5.2nC 330mΩ @ VGS= -4.5V -1.6A 2.2A -2.1A ID TA= 25°C 2.7A Description	Diodes
ZXMHC6A07N8	MOSFET H-Bridge A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 0.25Ω @ VGS= 10V N-CH 60V 3.2nC 0.35Ω @ VGS= 4.5V 0.40Ω @ VGS= -10V P-CH -60V 5.1nC 0.60Ω @ VGS= -4.5V -1.2A 1.5A -1.4A ID TA= 25°C 1.8A Descripti	Diodes
ZXMHN6A07T8	60V N-CHANNEL MOSFET H-BRIDGE	Diodes
ZXMHC6A07N8	MOSFET H-Bridge	Diodes
ZXMHC3F381N8	H Bridge	Diodes
ZXMHC3A01T8	COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE	Zetex Semiconductors

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