TSM3481 PDF Datasheet

The TSM3481 is 30V P-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TSM3481	30V P-Channel MOSFET 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 48 @ VGS = -10V 79 @ VGS = -4.5V TSM3481 SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ID (A) -5.3 -4.1 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-res	Taiwan Semiconductor Company

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Part No	Description	Manufacturers	PDF
TSM3400	30V N-Channel MOSFET 30V N-Channel MOSFET SOT-23 TSM3400 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 28 @ VGS = 10V 30 33 @ VGS = 4.5V 52 @ VGS = 2.5V ID (A) 5.8 5.0 4.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Blo	Taiwan Semiconductor Company
TSM3401	-30V, -3A, 60mΩ, P-Channel MOSFET Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low Onresistance ● Pb-free plating ● RoHS compliant ● Halogen-free package Application ● Load Switch ● PA Switch SOT23	Taiwan Semiconductor Company
TSM3404	30V N-Channel MOSFET TSM3404 30V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 30 @ VGS = 10V 43 @ VGS = 4.5V ID (A) 5.8 5.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Applicat	Taiwan Semiconductor Company
TSM3N90CZ	800V N-Channel Power MOSFET	Taiwan Semiconductor
TSM3N90CP	800V N-Channel Power MOSFET	Taiwan Semiconductor
TSM3N90CI	800V N-Channel Power MOSFET	Taiwan Semiconductor
TSM3N90CH	800V N-Channel Power MOSFET	Taiwan Semiconductor

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