TSM2303 PDF Datasheet

The TSM2303 is P-Channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TSM2303	P-Channel Power MOSFET TSM2303 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 180 @ VGS =-10V -30 300 @ VGS =-4.5V ID (A) -1.3 -1.1 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● P	Taiwan Semiconductor

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Part No	Description	Manufacturers	PDF
TSM2323	20V P-Channel MOSFET TSM2323 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 39 @ VGS = -4.5V -20 52 @ VGS = -2.5V 68 @ VGS = -1.8V ID (A) -4.7 -4.1 -2.0 Features Block Diagram ● ● Advance Trench Process Technology High Density Cell Design for Ultra	Taiwan Semiconductor Company
TSM2321	20V P-Channel Enhancement Mode MOSFET TSM2321 -20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ -4.5V, Ids @ -3.2A = 65mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A = 90mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excel	Taiwan Semiconductor Company
TSM2320	20V N-Channel Enhancement Mode MOSFET TSM2320 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.0A = 45mΩ RDS (on), Vgs @ 2.5V, Ids @ 2.0A = 65mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent th	Taiwan Semiconductor Company
TSM2N7002KD	60V N-Channel MOSFET	Taiwan Semiconductor
TSM2N7002K	60V N-Channel MOSFET	Taiwan Semiconductor Company
TSM2N7002E	50V N-Channel Enhancement Mode MOSFET	Taiwan Semiconductor Company
TSM2N7002	60V N-Channel Enhancement Mode MOSFET	Taiwan Semiconductor Company

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