TSF10N60M PDF Datasheet

The TSF10N60M is 600V N-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TSF10N60M	600V N-Channel MOSFET TSP10N60M , TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high	Truesemi

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Part No	Description	Manufacturers	PDF
TSF10H100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier creat by ART TSF10H100C Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss, High efficiency - High forward surge capability - Comp	Taiwan Semiconductor
TSF10U60C	Trench MOS Barrier Schottky Rectifier TSF10U60C Taiwan Semiconductor FEATURES - Excellent high temperature stability - Low forward voltage - Lower power loss, High efficiency - High forward surge capability - Compliant to RoHS directive 2011, 65, EU and in accordance to WEEE 2002, 96, EC - Halogen-free according to IEC 61249-2-21 defin	Taiwan Semiconductor
TSF10N60C	600V Insulated N-Channel Type Power MOSFET TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features - RDS(on) (Max 0.75 Ω )@VGS=10V - Gate Charge (Typical 45nC) - Improved dv, dt Capability - High ruggedness - 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source	Thinki Semiconductor
TSF18N60MR	N-Channel MOSFET	Truesemi
TSF18N50MR	N-Channel MOSFET	Truesemi
TSF18N50M	N-Channel MOSFET	Truesemi
TSF18N20M	N-Channel MOSFET	Truesemi

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