TPC6113 PDF Datasheet

The TPC6113 is Field Effect Transistor Silicon P Channel MOS Type. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TPC6113	Field Effect Transistor Silicon P Channel MOS Type TPC6113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC6113 Lithium Ion Battery Applications Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.) ( VGS = 4.5V) Low leakage current:	Toshiba Semiconductor

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Part No	Description	Manufacturers	PDF
TPC6101	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Portable Equipment Applications · · · · Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 8.2 S (typ.) Low leakage current: IDSS = 10	Toshiba Semiconductor
TPC6102	FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Rev. May 12, 2000 Rev. May 12, 2000	Toshiba Semiconductor
TPC6103	Silicon P Channel MOS Type TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 13 S (typ.) Low leakage current: IDSS = 10 A (ma	Toshiba Semiconductor
TPC6501	Silicon NPN Epitaxial Type	Toshiba Semiconductor
TPC6130	MOSFET, Transistor	Toshiba Semiconductor
TPC6111	Field Effect Transistor Silicon P Channel MOS Type	Toshiba Semiconductor
TPC6110	Field Effect Transistor Silicon P Channel MOS Type	Toshiba Semiconductor

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