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TPC6006-H PDF Datasheet

The TPC6006-H is Silicon N Channel MOS Type Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 TPC6006-H Silicon N Channel MOS Type Field Effect Transistor

TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 2.4 nC (typ.) Low drain-sour
Toshiba Semiconductor
Toshiba Semiconductor




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Part NoDescriptionManufacturersPDF
TPC6001 Notebook PC Applications Portable Equipment Applications

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (
Toshiba Semiconductor
Toshiba Semiconductor
datasheet TPC6001 pdf
TPC6002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

TPC6002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6002 Notebook PC Applications Portable Equipment Applications · · · · Low drain-source ON resistance: RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10
Toshiba Semiconductor
Toshiba Semiconductor
datasheet TPC6002 pdf
TPC6003 Silicon N Channel MOS Type (U-MOSIII)

TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 A (max)
Toshiba Semiconductor
Toshiba Semiconductor
datasheet TPC6003 pdf
TPC6501 Silicon NPN Epitaxial TypeToshiba Semiconductor
Toshiba Semiconductor
datasheet TPC6501 pdf
TPC6130 MOSFET, TransistorToshiba Semiconductor
Toshiba Semiconductor
datasheet TPC6130 pdf
TPC6113 Field Effect Transistor Silicon P Channel MOS TypeToshiba Semiconductor
Toshiba Semiconductor
datasheet TPC6113 pdf
TPC6111 Field Effect Transistor Silicon P Channel MOS TypeToshiba Semiconductor
Toshiba Semiconductor
datasheet TPC6111 pdf


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