TN28F010-90 PDF Datasheet

The TN28F010-90 is 28F010 1024K (128K X 8) CMOS FLASH MEMORY. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TN28F010-90	28F010 1024K (128K X 8) CMOS FLASH MEMORY E 8 28F010 1024K (128K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor, Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flash Technology EPROM-Compatible Pr	Intel Corporation
2		28F010 1024K (128K X 8) CMOS FLASH MEMORY E 8 28F010 1024K (128K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor, Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flash Technology EPROM-Compatible Pr	Intel Corporation
3		28F010 1024K (128K X 8) CMOS FLASH MEMORY E 8 28F010 1024K (128K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor, Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flash Technology EPROM-Compatible Pr	Intel Corporation

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Relevant Search Results

Part No	Description	Manufacturers	PDF
TN28F001BX-B150	1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via O	Intel Corporation
TN28F001BX-B90	1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via O	Intel Corporation
TN28F001BX-T150	1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via O	Intel Corporation
TN28F512-120	512K(64Kx8)CMOS FLASH MEMORY	Intel Corporation
TN28F020-90	28F020 2048K (256K X 8) CMOS FLASH MEMORY	Intel Corporation
TN28F020-150	28F020 2048K (256K X 8) CMOS FLASH MEMORY	Intel Corporation
TN28F020-120	28F020 2048K (256K X 8) CMOS FLASH MEMORY	Intel Corporation

List of most widely used semiconductors

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1N5818 | LM324N | A1015 | SMAJ20CA

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