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TK30A06N1 PDF Datasheet

The TK30A06N1 is MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 TK30A06N1 MOSFET, Transistor

TK30A06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK30A06N1 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS
Toshiba Semiconductor
Toshiba Semiconductor



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Part NoDescriptionManufacturersPDF
TK30A06J3A Field Effect Transistor

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3A Switching Regulator Applications - - - - Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet TK30A06J3A pdf
TK30S06K3L MOSFET, TransistorToshiba Semiconductor
Toshiba Semiconductor		 datasheet TK30S06K3L pdf
TK30J25D MOSFET, TransistorToshiba Semiconductor
Toshiba Semiconductor		 datasheet TK30J25D pdf
TK30E06N1 MOSFET, TransistorToshiba Semiconductor
Toshiba Semiconductor		 datasheet TK30E06N1 pdf
TK30A06J3A Field Effect TransistorToshiba Semiconductor
Toshiba Semiconductor		 datasheet TK30A06J3A pdf


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