TK11A50D PDF Datasheet

The TK11A50D is Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TK11A50D	Field Effect Transistor TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A50D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Charact	Toshiba Semiconductor

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Part No	Description	Manufacturers	PDF
TK11A60D	Field Effect Transistor TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enha	Toshiba Semiconductor
TK11A45D	Field Effect Transistor TK11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A45D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: Yfs = 3.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) Enhanc	Toshiba Semiconductor
TK11A55D	Field Effect Transistor TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK11A55D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.52 Ω (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhan	Toshiba Semiconductor
TK11S10N1L	Silicon N-channel MOSFET	Toshiba
TK11A65W	MOSFET, Transistor	Toshiba Semiconductor
TK11A65D	MOSFET, Transistor	Toshiba Semiconductor
TK11A60D	Field Effect Transistor	Toshiba Semiconductor

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