TK100E08N1 PDF Datasheet

The TK100E08N1 is MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TK100E08N1	MOSFET, Transistor TK100E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E08N1 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS	Toshiba Semiconductor

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Part No	Description	Manufacturers	PDF
TK100A10N1	MOSFETs Silicon N-channel MOS TK100A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100A10N1 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD	Toshiba
TK100F04K3	Field Effect Transistor TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm High forward transfer admittance: \|Yfs\| = 174 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement-m	Toshiba
TK100F06K3	Field Effect Transistor TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications 10.0 ± 0.3 9.5 ± 0.2 1.0 ± 0.3 Low drain-source ON resistance: RDS (ON) = 4.0mΩ (typ.) High forward transfer admittance: \|Y	Toshiba
TK10X40D	MOSFET, Transistor	Toshiba Semiconductor
TK10V60W	MOSFET, Transistor	Toshiba Semiconductor
TK10S04K3L	MOSFET, Transistor	Toshiba Semiconductor
TK10Q60W	MOSFET, Transistor	Toshiba Semiconductor

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