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TIP35C PDF DatasheetThe TIP35C is Complementary power transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | TIP35C | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP36C. Icmax:25A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu
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 KEC |
| 2 | Complementary Silicon Power Transistors TIP35 TIP35A TIP35B TIP35C NPN TIP36 TIP36A TIP36B TIP36C PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, de
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 Central Semiconductor |
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| 3 | Complementary Power Transistors TIP35C, 36C
Complementary Power Transistors
Designed for use in general purpose power amplifier and switching applications.
Features:
Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C
DC Current Gain hFE = 25 (Minimum) at IC = 1.5A. Current Gain-Bandwidth Product fT
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 Multicomp |
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| 4 | Complementary power transistors TIP35C TIP36C
Complementary power transistors
Features
- Low collector-emitter saturation voltage - Complementary NPN - PNP transistors
Applications
- General purpose - Audio amplifier
Description
The devices are manufactured in planar technology with “base island” layout. The resulting transis
|
 STMicroelectronics |
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