TIM1414-8-252 PDF Datasheet

The TIM1414-8-252 is Microwave Power GaAs FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TIM1414-8-252	Microwave Power GaAs FET	Toshiba

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Relevant Search Results

Part No	Description	Manufacturers	PDF
TIM1414-5-252	POWER GAAS FET	Toshiba Semiconductor
TIM1414-4LA	MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GH- to 14.5GH- n HIGH GAIN G1dB=6.5dB at 14.0GH- to 14.5GHz TIM1414-4LA PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°	Toshiba Semiconductor
TIM1414-7	MICROWAVE POWER GAAS FET	Toshiba Semiconductor
TIM1414-8L	Microwave Power GaAs FET	Toshiba
TIM1414-8	Microwave Power GaAs FET	Toshiba
TIM1414-7-253	Microwave Power GaAs FET	Toshiba
TIM1414-7	MICROWAVE POWER GAAS FET	Toshiba Semiconductor

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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