TC74ACT08F PDF Datasheet

The TC74ACT08F is Quad 2-Input AND Gate. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TC74ACT08F	Quad 2-Input AND Gate TC74ACT08P, F, FN, FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT08P,TC74ACT08F,TC74ACT08FN,TC74ACT08FT Quad 2-Input AND Gate The TC74ACT08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves	Toshiba Semiconductor
2	TC74ACT08FN	Quad 2-Input AND Gate TC74ACT08P, F, FN, FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT08P,TC74ACT08F,TC74ACT08FN,TC74ACT08FT Quad 2-Input AND Gate The TC74ACT08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves	Toshiba Semiconductor
3	TC74ACT08FT	Quad 2-Input AND Gate TC74ACT08P, F, FN, FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT08P,TC74ACT08F,TC74ACT08FN,TC74ACT08FT Quad 2-Input AND Gate The TC74ACT08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves	Toshiba Semiconductor

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TC74A5	Tiny Serial Digital Thermal Sensor TC74 Tiny Serial Digital Thermal Sensor Features Digital Temperature Sensing in SOT-23-5 Package Outputs Temperature as an 8-Bit Digital Word Simple Serial Port Interface Solid-State Temperature Sensing: - ±2°C Accuracy from +25°C to +85°C - ±3°C Accuracy from 0°C to +125°C 3.0 and 5.5V	Microchip Technology
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TC74AC00P	QUAD 2 - INPUT NAND GATE TC74AC00P, F, FN, FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC00P,TC74AC00F,TC74AC00FN,TC74AC00FT Quad 2-Input NAND Gate The TC74AC00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the	Toshiba Semiconductor
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