SIHFP360 PDF Datasheet

The SIHFP360 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SiHFP360	Power MOSFET, Transistor IRFP360, SiHFP360 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 30 110 Single D FEATURES 400 0.20 Dynamic dV, dt Rated Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleli	Vishay Siliconix

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Relevant Search Results

Part No	Description	Manufacturers	PDF
SiHFP044	Power MOSFET, Transistor Power MOSFET IRFP044, SiHFP044 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.028 TO-247 D S D G G S N-Channel MOSFET FEATURES Dynamic dV, dt Rating Isolated Central Mounting Hole 175 °C Operating Tem	Vishay Siliconix
SiHFP048	Power MOSFET, Transistor IRFP048, SiHFP048 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 38 Single D FEATURES 60 0.018 Dynamic dV, dt Rating Isolated Central Mounting Hole 175 °C Operating Temperature Ease of Paralleling Simple D	Vishay Siliconix
SiHFP048R	Power MOSFET, Transistor IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 38 Single D FEATURES 60 0.018 Dynamic dV, dt Rating Isolated Central Mounting Hole 175 °C Operating Temperature Ease of Paralleling Simple	Vishay Siliconix
SIHFZ48S	Power MOSFET, Transistor	Vishay Siliconix
SIHFZ48L	Power MOSFET, Transistor	Vishay Siliconix
SIHFZ48	Power MOSFET, Transistor	Vishay
SiHFZ46-E3	Power MOSFET, Transistor	Vishay

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