SIHB20N50E PDF Datasheet

The SIHB20N50E is E Series Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SiHB20N50E	E Series Power MOSFET www.vishay.com SiHB20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 92 10 19 Single 0.184 D2PAK (TO-263) D GD S G S N-Channel MOSFET FEATURES Low figure-of-merit (FOM)	Vishay

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Part No	Description	Manufacturers	PDF
SiHB22N60E	E Series Power MOSFET SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C ( ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 86 11 24 Single D FEATURES 650 0.18 Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduc	Vishay Siliconix
SiHB22N60S	S Series Power MOSFET www.vishay.com SiHB22N60S Vishay Siliconix S Series Power MOSFET PRODUCT SUMMARY VDS at TJ max. (V) RDS(on) max. at 25 °C ( ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 17 25 Single 0.190 D2PAK (TO-263) D GD S G S N-Channel MOSFET FEATURES Generation One Halogen-fre	Vishay
SiHB24N65E	E Series Power MOSFET www.vishay.com SiHB24N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C ( ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 122 21 37 Single 0.145 D D2PAK (TO-263) G GD S S N-Channel MOSFET ORDERING INFORMATION Package Lead (	Vishay
SiHB35N60E	Power MOSFET, Transistor	Vishay
SiHB33N60E	Power MOSFET, Transistor	Vishay
SiHB30N60E	Power MOSFET, Transistor	Vishay
SIHB24N65EF	MOSFET, Transistor	Vishay

List of most widely used semiconductors

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