SI5999EDU PDF Datasheet

The SI5999EDU is Dual P-Channel 20 V (D-S) MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	Si5999EDU	Dual P-Channel 20 V (D-S) MOSFET Dual P-Channel 20 V (D-S) MOSFET Si5999EDU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) ( ) 0.059 at VGS = - 4.5 V - 20 0.096 at VGS = - 2.5 V ID (A) - 6a - 6a Qg (Typ.) 6.9 nC PowerPAK ChipFET Dual 1 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFE	Vishay

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Part No	Description	Manufacturers	PDF
SI599	10-810MHZ I2C PROGRAMMABLE XO/VCXO Si598, Si599 1 0 8 1 0 M H Z I 2C P ROGRAMMABLE X O , V C X O Features I2C programmable output frequencies from 10 to 810 MHz 0.5 ps RMS phase jitter Superior power supply rejection: 0.3 0.4 ps additive jitter Available LVPECL, CMOS, LVDS, and CML outputs 1.8, 2.5, or 3.3 V supply Pin- an	Silicon Laboratories
Si5997DU	Dual P-Channel 30 V (D-S) MOSFET Dual P-Channel 30 V (D-S) MOSFET Si5997DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) ( ) 0.054 at VGS = - 10 V - 30 0.088 at VGS = - 4.5 V ID (A) - 6a - 6a Qg (Typ.) 4.8 nC PowerPAK ChipFET Dual 1 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET	Vishay
Si5997DU	Dual P-Channel 30 V (D-S) MOSFET	Vishay
SI599	10-810MHZ I2C PROGRAMMABLE XO/VCXO	Silicon Laboratories
Si5980DU	Dual N-Channel 100-V (D-S) MOSFET	Vishay
SI598	10-810MHZ I2C PROGRAMMABLE XO/VCXO	Silicon Laboratories

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