SW20N60U PDF Datasheet

The SW20N60U is MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SW20N60U	MOSFET, Transistor SAMWIN SW20N60U N-channel TO-3P MOSFET Features TO-3P - High ruggedness - RDS(ON) (Max0.45Ω)@VGS=10V - Gate Charge (Typical 108nC) - Improved dv, dt Capability - 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS techn	SEMIPOWER

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Part No	Description	Manufacturers	PDF
SW20N50D	N-channel MOSFET SW20N50D Features Low gate charge 100% avalanche tested Improved dv, dt capability RoHS compliant JEDEC Qualification N-channel MOSFET BVDSS 500V ID 20A RDS(on) < 0.3W Device SW20N50D Package TO-3PN Marking SW20N50D Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-S	Seawon
SW20N50	N-channel Power MOSFET SAMWIN SW20N50 N-channel Power MOSFET Features - High ruggedness MOSFET - RDS(ON) (Max 0.27Ω)@VGS=10V - Gate Charge (Max 80nC) - Improved dv, dt Capability - 100% Avalanche Tested TO-3P BVDSS : 500V ID : 20A* RDS(ON) : 0.27ohm 1 2 2 3 1. Gate 2. Drain 3. Source General Description This po	SAMWIN
SW20N60	N-channel Power MOSFET SAMWIN SW20N60 N-channel Power MOSFET Features - High ruggedness MOSFET - RDS(ON) (Max 0.3Ω)@VGS=10V - Gate Charge (Max 80 nC) - Improved dv, dt Capability - 100% Avalanche Tested TO-3P BVDSS : 600V ID : 20A* RDS(ON) : 0.3ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General Description This p	SAMWIN
SW20N65K	MOSFET, Transistor	SEMIPOWER
SW20N60	N-channel Power MOSFET	SAMWIN
SW20N50U	MOSFET, Transistor	SEMIPOWER
SW20N50D	N-channel MOSFET	Seawon

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