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STPSC806 PDF DatasheetThe STPSC806 is Schottky Barrier 600 V power Schottky silicon carbide diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | STPSC806 | Schottky Barrier 600 V power Schottky silicon carbide diode
STPSC806
600 V power Schottky silicon carbide diode
Features
- - -
No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
A K
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured
|
 ST Microelectronics |
| 2 | STPSC806D | 600 V power Schottky silicon carbide diode
STPSC806D
600 V power Schottky silicon carbide diode
Features
- - -
No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
A K
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured
|
 STMicroelectronics |
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