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STP9NB50 PDF Datasheet

The STP9NB50 is PowerMesh MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 STP9NB50 PowerMesh MOSFET

N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220, TO-220FP PowerMesh™ MOSFET TYPE STP9NB50 STP9NB50FP s s s s s STP9NB50 STP9NB50FP VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8.6 A 4.9 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACI
ST Microelectronics
ST Microelectronics
2 STP9NB50FP PowerMesh MOSFET

N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220, TO-220FP PowerMesh™ MOSFET TYPE STP9NB50 STP9NB50FP s s s s s STP9NB50 STP9NB50FP VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8.6 A 4.9 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACI
ST Microelectronics
ST Microelectronics




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Relevant Search Results

Part NoDescriptionManufacturersPDF
STP9NB60 PowerMesh MOSFET

® STP9NB60 STP9NB60FP N - CHANNEL 600V - 0.7Ω - 9A TO-220, TO220FP PowerMESH™ MOSFET TYPE ST P9NB60 ST P9NB60FP s s s s s V DSS 600 V 600 V R DS(on) < 0.8 Ω < 0.8 Ω ID 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPAC
ST Microelectronics
ST Microelectronics
datasheet STP9NB60 pdf
STP9NC60 N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220, TO-220FP PowerMESH™ ΙΙ MOSFET T YPE STP9NC60 STP9NC60FP ν ν ν ν ν V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOL
ST Microelectronics
ST Microelectronics
datasheet STP9NC60 pdf
STP9NC60FP N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220, TO-220FP PowerMESH™ ΙΙ MOSFET T YPE STP9NC60 STP9NC60FP ν ν ν ν ν V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOL
ST Microelectronics
ST Microelectronics
datasheet STP9NC60FP pdf
STP9NM60N N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STP9NM60N pdf
STP9NM60 N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STP9NM60 pdf
STP9NM50N N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STP9NM50N pdf
STP9NM40N N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STP9NM40N pdf


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