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STD9NM50N PDF Datasheet

The STD9NM50N is N-channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 STD9NM50N N-channel Power MOSFET

STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID 3 7.5A 1
STMicroelectronics
STMicroelectronics
2 STD9NM50N-1 N-channel Power MOSFET

STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56Ω <0.56Ω <0.56Ω <0.56Ω ID 3 7.5A 1
STMicroelectronics
STMicroelectronics




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Relevant Search Results

Part NoDescriptionManufacturersPDF
STD9N10 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST D9N10 s s s s s s s s V DSS 100 V R DS(on) < 0.27 Ω ID 9 A s s TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPE
ST Microelectronics
ST Microelectronics
datasheet STD9N10 pdf
STD9N10-1 N-CHANNEL POWER MOS TRANSISTOR

N-CHANNEL 100V - 0.23 Ω - 9A DPAK, IPAK POWER MOS TRANSISTOR Table 1. General Features Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A STD9N10 STD9N10-1 Figure 1. Package FEATURES SUMMARY - TYPICAL RDS(on) = 0.23 Ω - - - - - - - AVALANCHE RUGGED TECHNOLOGY 10
ST Microelectronics
ST Microelectronics
datasheet STD9N10-1 pdf
STD9N10L N-CHANNEL POWER MOS TRANSISTOR

STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK, DPAK POWER MOS TRANSISTOR TYPE STD9N10L s s s s s s s s V DSS 100 V R DS(on) < 0.27 Ω ID 9A s TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATIN
ST Microelectronics
ST Microelectronics
datasheet STD9N10L pdf
STD9NM60N N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STD9NM60N pdf
STD9NM60-1 N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STD9NM60-1 pdf
STD9NM60 N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STD9NM60 pdf
STD9NM50N-1 N-channel Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STD9NM50N-1 pdf


List of most widely used semiconductors


 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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