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STD40NE03L PDF Datasheet

The STD40NE03L is N-CHANNEL STripFET POWER MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 STD40NE03L N-CHANNEL STripFET POWER MOSFET

® STD40NE03L N - CHANNEL 30V - 0.012 Ω - 40A TO-252 STripFET™ POWER MOSFET TYPE STD40NE03L s s s s V DSS 30 V R DS(o n) < 0.016 Ω ID 40 A s TYPICAL RDS(on) s = 0.012 Ω EXCEPTIONAL dv, dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION ADD SUFF
ST Microelectronics
ST Microelectronics
2 N-CHANNEL POWER MOSFET

® STD40NE03L N - CHANNEL 30V - 0.012 Ω - 40A TO-252 STripFET™ POWER MOSFET TYPE STD40NE03L s s s s V DSS 30 V R DS(o n) < 0.016 Ω ID 40 A s TYPICAL RDS(on) s = 0.012 Ω EXCEPTIONAL dv, dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION ADD SUFF
STMicroelectronics
STMicroelectronics




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Relevant Search Results

Part NoDescriptionManufacturersPDF
STD40NF02L N-CHANNEL STripFET POWER MOSFET

® STD40NF02L N-CHANNEL 20V - 0.01 Ω - 40A DPAK LOW GATE CHARGE STripFET™ POWER MOSFET TARGET DATA T YPE STD40NF02L s TYPICAL RDS(on) s s s s V DSS 20 V R DS(on) < 0.013 Ω ID 40 A = 0.01 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSS
ST Microelectronics
ST Microelectronics
datasheet STD40NF02L pdf
STD40NF03L N-CHANNEL STripFET POWER MOSFET

STD40NF03L N-channel 30V - 0.0090Ω - 40A - DPAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS 30V RDS(on) <0.011Ω ID 40A STD40NF03L - - - - - Logic level device Optimal RDS(on) x Qg trade-off Conduction losses reduced Switching losses reduced Low threshold drive D
ST Microelectronics
ST Microelectronics
datasheet STD40NF03L pdf
STD40NF06 N-CHANNEL POWER MOSFET

N-CHANNEL 60V - 0.024 Ω - 40A DPAK STripFET™ II POWER MOSFET TYPE STD40NF06 s TYPICAL s s s STD40NF06 VDSS 60 V RDS(on) <0.028 Ω ID 40 A RDS(on) = 0.024 Ω EXCEPTIONAL dv, dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3
ST Microelectronics
ST Microelectronics
datasheet STD40NF06 pdf
STD4NS25 N-CHANNEL MOSFETSTMicroelectronics
STMicroelectronics
datasheet STD4NS25 pdf
STD4NK80Z-1 N-channel MOSFETSTMicroelectronics
STMicroelectronics
datasheet STD4NK80Z-1 pdf
STD4NK80Z N-Channle MOSFETST Microelectronics
ST Microelectronics
datasheet STD4NK80Z pdf
STD4NK60Z-1 N-CHANNEL Power MOSFETSTMicroelectronics
STMicroelectronics
datasheet STD4NK60Z-1 pdf


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