STB8NC50 PDF Datasheet

The STB8NC50 is N-CHANNEL MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	STB8NC50	N-CHANNEL MOSFET N-CHANNEL 500V - 0.7Ω - 8A D2PAK PowerMesh™II MOSFET TYPE STB8NC50 s s s s s STB8NC50 VDSS 500V RDS(on) < 0.85 Ω ID 8A TYPICAL RDS(on) = 0.7Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 DESCRIPTION The PowerMESH™II is t	STMicroelectronics
2	STB8NC50-1	N-CHANNEL MOSFET N-CHANNEL 500V - 0.7 Ω - 8A TO-220, TO-220FP, I2PAK PowerMesh™II MOSFET TYPE STP(B)8NC50(-1) STP8NC50FP s s s s s STP8NC50 - STP8NC50FP STB8NC50-1 VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8A 8A 3 1 2 TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED N	STMicroelectronics

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Relevant Search Results

Part No	Description	Manufacturers	PDF
STB8NA50	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STB8NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 n n n n n n n n V DSS 500 V R DS(on ) < 0.85 Ω ID 8 A n TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE	STMicroelectronics
STB8NC50-1	N-CHANNEL MOSFET N-CHANNEL 500V - 0.7 Ω - 8A TO-220, TO-220FP, I2PAK PowerMesh™II MOSFET TYPE STP(B)8NC50(-1) STP8NC50FP s s s s s STP8NC50 - STP8NC50FP STB8NC50-1 VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8A 8A 3 1 2 TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED N	STMicroelectronics
STB8NC70Z	N-CHANNEL MOSFET STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220, FP, D2PAK, I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP8NC70Z, FP STB8NC70Z, -1 s s VDSS 700V 700V RDS(on) < 1.2 Ω < 1.2 Ω ID 6.8 A 6.8 A 1 3 s s s TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv, d	STMicroelectronics
STB8NS25	N-CHANNEL MOSFET	STMicroelectronics
STB8NM60N	N-CHANNEL Power MOSFET	STMicroelectronics
STB8NM60D	N-CHANNEL Power MOSFET	STMicroelectronics
STB8NM60	N-CHANNEL MOSFET	STMicroelectronics

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