SSP6N55 PDF Datasheet

The SSP6N55 is N-Channel Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SSP6N55	N-Channel Power MOSFET, Transistor w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c	Samsung

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Part No	Description	Manufacturers	PDF
SSP6N80A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) 1 2 3 SSP6N80A BVDSS = 800 V RDS(on) = 2.0 Ω ID = 6 A	Fairchild
SSP6N70A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A	Fairchild
SSP6N90A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 Ω (Typ.) 1 2 3 SSP6N90A BVDSS = 900 V RDS(on) = 2.3 Ω ID = 6 A	Fairchild
SSP6N90A	Advanced Power MOSFET	Fairchild
SSP6N80A	Advanced Power MOSFET	Fairchild
SSP6N70A	Advanced Power MOSFET	Fairchild
SSP6N60	N-Channel Power MOSFET, Transistor	Samsung

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1N5818 | LM324N | A1015 | SMAJ20CA

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