SSP4N80AS PDF Datasheet

The SSP4N80AS is Advanced Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SSP4N80AS	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSP4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 4.5 A T	Fairchild Semiconductor

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Part No	Description	Manufacturers	PDF
SSP4N60B	600V N-Channel MOSFET SSP4N60B, SSS4N60B SSP4N60B, SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistanc	Fairchild Semiconductor
SSP4N60AS	Advanced Power MOFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-	Fairchild Semiconductor
SSP4N70	(SSP4N70 / SSP4N80) N-Channel Power MOSFETs	Samsung Electronics
SSP4N80A	Advanced Power MOSFET	Fairchild Semiconductor
SSP4N80	(SSP4N70 / SSP4N80) N-Channel Power MOSFETs	Samsung Electronics
SSP4N70	(SSP4N70 / SSP4N80) N-Channel Power MOSFETs	Samsung Electronics
SSP4N60B	600V N-Channel MOSFET	Fairchild Semiconductor

List of most widely used semiconductors

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