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SSM3K7002BF PDF Datasheet

The SSM3K7002BF is Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 SSM3K7002BF Field Effect Transistor

SSM3K7002BF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BF High-Speed Switching Applications Analog Switch Applications Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.1 Ω (max) (@VGS =
Toshiba Semiconductor
Toshiba Semiconductor
2 SSM3K7002BFS Field Effect Transistor

SSM3K7002BFS 東芝電界 果トランジスタ シリコンNチャネルMOS形(U-MOSⅣ) SSM3K7002BFS 高速スイッチング アナログスイッチ 位: mm 小型パッケ ジで高密度 に最適 オン抵抗が低い : RDS(ON) = 3.3 Ω (最大) (@VGS = 4.5 V) : RDS(ON) = 2.6 Ω (最大)
Toshiba Semiconductor
Toshiba Semiconductor
3 SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications

SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.1 Ω (
Toshiba Semiconductor
Toshiba Semiconductor




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Relevant Search Results

Part NoDescriptionManufacturersPDF
SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications · · · Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Unit: m
Toshiba Semiconductor
Toshiba Semiconductor
datasheet SSM3K02F pdf
SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications · · · Small Package Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Uni
Toshiba Semiconductor
Toshiba Semiconductor
datasheet SSM3K01T pdf
SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switching Applications Analog Switch Applications · · · Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Unit: mm Maximum Ratings (Ta = 25°C) Charac
Toshiba Semiconductor
Toshiba Semiconductor
datasheet SSM3K17FU pdf
SSM3K7002FU High-Speed Switching ApplicationsToshiba Semiconductor
Toshiba Semiconductor
datasheet SSM3K7002FU pdf
SSM3K7002F High-Speed Switching ApplicationsToshiba Semiconductor
Toshiba Semiconductor
datasheet SSM3K7002F pdf
SSM3K7002BFU High-Speed Switching Applications Analog Switch ApplicationsToshiba Semiconductor
Toshiba Semiconductor
datasheet SSM3K7002BFU pdf
SSM3K7002BFS Field Effect TransistorToshiba Semiconductor
Toshiba Semiconductor
datasheet SSM3K7002BFS pdf


List of most widely used semiconductors


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