SSF4703DC PDF Datasheet

The SSF4703DC is 20V P-Channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SSF4703DC	MOSFET, Transistor DESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES ● MOSFET VDS = -20V,ID = -3.4A RDS(O	Silikron
2	SSF4703DC	20V P-Channel MOSFET DESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. SSF4703DC 20V P-Channel MOSFET GENERAL FEATURES ● M	GOOD-ARK

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Relevant Search Results

Part No	Description	Manufacturers	PDF
SSF4703	MOSFET, Transistor SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES ● MOSFET VDS = -20V,ID = -3.4	Silikron
SSF47NS60H	MOSFET, Transistor Main Product Characteristics: VDSS 600V RDS(on) 0.059ohm(typ.) ID 47A Features and Benefits: High dv, dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance SSF47NS60H TO247 Schematic diagram Description: The SSF47NS60H series	Silikron
SSF4NS60D	MOSFET, Transistor	Silikron
SSF4N90AS	Advanced Power MOSFET	Samsung Electronics
SSF4N80AS	Advanced Power MOSFET	Samsung Electronics
SSF4N60G	N-Channel MOSFET	GOOD-ARK

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