SSF3620 PDF Datasheet

The SSF3620 is PWM applications. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SSF3620	Dual N-Channel MOSFET SSF3620 30V Dual N-Channel MOSFET DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =7A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ V	GOOD-ARK
2	SSF3620	PWM applications SSF3620 DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =7A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V	Silikron Semiconductor Co

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Relevant Search Results

Part No	Description	Manufacturers	PDF
SSF3606	MOSFET, Transistor SSF3606 DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =15A RDS(ON) < 8.5mΩ @ VGS=4.5V RDS(ON) < 6mΩ	Silikron Semiconductor Co
SSF3610	MOSFET, Transistor SSF3610 DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 9mΩ	Silikron Semiconductor Co
SSF3612	MOSFET, Transistor SSF3612 DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ	Silikron Semiconductor Co
SSF3N80F	MOSFET, Transistor	Silikron
SSF3N80D	MOSFET, Transistor	Silikron
SSF3GG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI
SSF3FG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI

List of most widely used semiconductors

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1N5818 | LM324N | A1015 | SMAJ20CA

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