SSF3611E PDF Datasheet

The SSF3611E is MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SSF3611E	MOSFET, Transistor Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits: SOP-8 Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate c	Silikron Semiconductor
2	SSF3611E	P-Channel MOSFET Main Product Characteristics VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits SOP-8 Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse bod	GOOD-ARK

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Relevant Search Results

Part No	Description	Manufacturers	PDF
SSF3606	MOSFET, Transistor SSF3606 DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =15A RDS(ON) < 8.5mΩ @ VGS=4.5V RDS(ON) < 6mΩ	Silikron Semiconductor Co
SSF3610	MOSFET, Transistor SSF3610 DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 9mΩ	Silikron Semiconductor Co
SSF3612	MOSFET, Transistor SSF3612 DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ	Silikron Semiconductor Co
SSF3N80F	MOSFET, Transistor	Silikron
SSF3N80D	MOSFET, Transistor	Silikron
SSF3GG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI
SSF3FG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI

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