SSF3428 PDF Datasheet

The SSF3428 is PWM applications. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SSF3428	N-Channel MOSFET DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 34mΩ @ VGS=10V ● High Power and current han	GOOD-ARK
2	SSF3428	PWM applications SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 34mΩ @ VGS=10V	Silikron Semiconductor Co

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Relevant Search Results

Part No	Description	Manufacturers	PDF
SSF3401	PWM applications SSF3401 DESCRIPTION The SSF3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 120m�	Silikron Semiconductor Co
SSF3402	Battery protection SSF3402 DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. G D S GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V ● High Power and current handing c	Silikron Semiconductor Co
SSF3420	PWM applications SSF3420 DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. D G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25m�	Silikron Semiconductor Co
SSF3N80F	MOSFET, Transistor	Silikron
SSF3N80D	MOSFET, Transistor	Silikron
SSF3GG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI
SSF3FG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI

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