SSF3341 PDF Datasheet

The SSF3341 is MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SSF3341	MOSFET, Transistor Main Product Characteristics: VDSS RDS(on) ID -30V 42mΩ (typ.) -4.2A ① SOT-23 Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re	Silikron Semiconductor
2	SSF3341	P-Channel MOSFET Main Product Characteristics VDSS RDS(on) ID -30V 42mΩ (typ.) -4.2A ① SOT-23 Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco	GOOD-ARK
3	SSF3341L	MOSFET, Transistor SSF3341L DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VG	Silikron Semiconductor
4	SSF3341L	P-Channel MOSFET SSF3341L 30V P-Channel MOSFET DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -30V,ID = -	GOOD-ARK

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Relevant Search Results

Part No	Description	Manufacturers	PDF
SSF3324	MOSFET, Transistor SSF3324 DESCRIPTION The SSF3324 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =5.8A RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30m�	Silikron Semiconductor Co
SSF3338	MOSFET, Transistor SSF3338 DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =4A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 47mΩ	Silikron Semiconductor Co
SSF3344	MOSFET, Transistor SSF3344 DESCRIPTION The SSF3344 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. G D GENERAL FEATURES ● VDS = 30V,ID = 4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 70mΩ @ VGS=4.5V RDS(ON) < 55mΩ @ VGS=10V ● High P	Silikron Semiconductor Co
SSF3N80F	MOSFET, Transistor	Silikron
SSF3N80D	MOSFET, Transistor	Silikron
SSF3GG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI
SSF3FG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI

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