SSF3002EG1 PDF Datasheet

The SSF3002EG1 is MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SSF3002EG1	MOSFET, Transistor Main Product Characteristics: VDSS 30V RDS(on) 1ohm(typ.) ID 0.5A① SOT23 Features andBenefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body	Silikron

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Part No	Description	Manufacturers	PDF
SSF3014	Advanced trench process technology SSF3014 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60A BV=60V Rdson=10mohm Description: The SSF3014 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new	Silikron Semiconductor Co
SSF3018	Advanced trench process technology SSF3018 Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test ID=60A BV=100V Rdson=15mohm Description: The SSF3018 is a new ge	Silikron Semiconductor Co
SSF3018D	Advanced trench process technology SSF3018D Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test ID=80A BV=100V Rdson=14mohm Description: The SSF3018D is a new g	Silikron Semiconductor Co
SSF3N80F	MOSFET, Transistor	Silikron
SSF3N80D	MOSFET, Transistor	Silikron
SSF3GG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI
SSF3FG	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER	GULF SEMI

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