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SSF2N60 PDF Datasheet

The SSF2N60 is N-Channel enhancement mode power field effect transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 SSF2N60 N-Channel enhancement mode power field effect transistors

SSF2N60 Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220 Marking and pin Assignm ent Schematic dia gram Features and Benefits: Advanced Process Technology Special designed for PWM, load switching dan gene ral pur pose applications
Silikron
Silikron
2 600V N-Channel MOSFET

Main Product Characteristics VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Features and Benefits TO-220 Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150�
GOOD-ARK
GOOD-ARK
3 SSF2N60D MOSFET, Transistor

Main Product Characteristics VDSS RDS(on) 600V 3.8Ω (typ.) ID 2A Features and Benefits TO-252 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Silikron
Silikron
4 SSF2N60D2 600V N-Channel MOSFET

Main Product Characteristics VDSS RDS(on) ID 600V 3.7Ω (typ.) 2A TO-252 Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 1
GOOD-ARK
GOOD-ARK




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Relevant Search Results

Part NoDescriptionManufacturersPDF
SSF2N60D2 600V N-Channel MOSFET

Main Product Characteristics VDSS RDS(on) ID 600V 3.7Ω (typ.) 2A TO-252 Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 1
GOOD-ARK
GOOD-ARK
datasheet SSF2N60D2 pdf
SSF2N60F MOSFET, Transistor

Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Features and Benefits: TO220F Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
Silikron
Silikron
datasheet SSF2N60F pdf
SSF2N60D MOSFET, Transistor

Main Product Characteristics VDSS RDS(on) 600V 3.8Ω (typ.) ID 2A Features and Benefits TO-252 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Silikron
Silikron
datasheet SSF2N60D pdf
SSF2N60G MOSFET, TransistorSilikron
Silikron
datasheet SSF2N60G pdf
SSF2N60F MOSFET, TransistorSilikron
Silikron
datasheet SSF2N60F pdf
SSF2N60D2 600V N-Channel MOSFETGOOD-ARK
GOOD-ARK
datasheet SSF2N60D2 pdf
SSF2N60D MOSFET, TransistorSilikron
Silikron
datasheet SSF2N60D pdf


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