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SPN6335S36RG PDF Datasheet

The SPN6335S36RG is Dual N-Channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 SPN6335S36RG Dual N-Channel Enhancement Mode MOSFET

SPN6335 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6335 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide sup
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SYNC POWER
2 SPN6335S36RGB Dual N-Channel Enhancement Mode MOSFET

SPN6335 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6335 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide sup
SYNC POWER
SYNC POWER




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Part NoDescriptionManufacturersPDF
SPN6335 Dual N-Channel Enhancement Mode MOSFET

SPN6335 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6335 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide sup
SYNC POWER
SYNC POWER
datasheet SPN6335 pdf
SPN6338 Dual N-Channel Enhancement Mode MOSFET

SPN6338 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6338 is the Dual N-Channel enhancem ent mode power field effect transistors are produced using high cell density , D MOS trench technolog y. This high densit y process is especi ally tailored to minim ize on-state resistance an d prov
SYNC POWER
SYNC POWER
datasheet SPN6338 pdf
SPN6335S36RGB Dual N-Channel Enhancement Mode MOSFET

SPN6335 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6335 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide sup
SYNC POWER
SYNC POWER
datasheet SPN6335S36RGB pdf
SPN6562 Dual N-Channel Enhancement Mode MOSFETSYNC POWER
SYNC POWER
datasheet SPN6562 pdf
SPN6561 Dual N-Channel Enhancement Mode MOSFETSYNC POWER
SYNC POWER
datasheet SPN6561 pdf
SPN6435 Dual N-Channel Enhancement Mode MOSFETSYNC POWER
SYNC POWER
datasheet SPN6435 pdf
SPN6338 Dual N-Channel Enhancement Mode MOSFETSYNC POWER
SYNC POWER
datasheet SPN6338 pdf


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