SP2013 PDF Datasheet

The SP2013 is P-Channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	SP2013	P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.	SamHop

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Relevant Search Results

Part No	Description	Manufacturers	PDF
SP201	RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM, AM, MRI, Laser Driver and others.	Polyfet RF Devices
SP20150	VOLTAGE 150V 20.0AMP Schottky Barrier Rectifier * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction	SeCoS
SP20100R	20.0 Amp Schottky Barrier Rectifiers Low forward voltage drop High current capability High reliability High surge current capability Epitaxial construction.	SeCoS
SP208EH	High Speed +5V High Performance RS232 Transceivers	Sipex
SP208E	High ESD +5V RS-232 Transceivers	Exar
SP208	+5V RS-232 Serial Transceivers	Exar
SP207H	+5V High-Speed RS-232 Transceivers	Sipex

List of most widely used semiconductors

6N137 | LM393 | 2N3906 | 2N2222 | TIP120 |

1N5818 | LM324N | A1015 | SMAJ20CA

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